Hot electron photoemission in metal–semiconductor structures aided by resonance tunneling

نویسندگان

چکیده

Enhancement of the surface photoemission from metal into semiconductor by resonance tunneling photoexcited electrons through (quasi-) discrete level in quantum well, located within Schottky barrier metal–semiconductor interface, is studied theoretically taking account difference between electron masses and semiconductor. It shown, particular, that can lead to redshift threshold wavelength photoeffect, higher slope linear growth photocurrent near (in contrast quadratic growth, i.e., Fowler's law), possibility increase substantially efficiency similarly recent experimental results on hot carrier generation plasmonic structures with a energy at interface. The effective shown significantly affect results. Double-barrier resonant may become attractive for applications photochemistry photodetectors IR middle regions spectrum.

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ژورنال

عنوان ژورنال: Applied Physics Letters

سال: 2021

ISSN: ['1520-8842', '0003-6951', '1077-3118']

DOI: https://doi.org/10.1063/5.0048804